Nº de artículo:
230595493
Gallium Nitride (GaN): Physics, Devices, and Technology
Nº de artículo:
230595493
HNL 4445
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Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology.
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Detalles de producto
- Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. Its sensitivity to ionizing radiation is low, making it a suitable material for solar cell arrays for satellites. T Daha fazla göster
| Publishers | crc press |
| Date of publication | July 26, 2017 |
| Prints | 1. |
| Language | English |
| Print Length | 388 pages |
| ISBN-10 | 1138893358 |
| ISBN-13 | 978-1138893351 |
| Dimensions | 15.6 x 2.24 x 23.39 cm |
DESCRIPCIÓN DEL PRODUCTO
Gallium Nitride (GaN): Physics, Devices, and Technology
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Preguntas y respuestas de los clientes
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Pregunta:
What are the advantages of GaN-based material systems?
Respuesta: GaN-based material systems have wide band gaps and high electron mobility, making them suitable for optoelectronic, high-power, and high-frequency devices. -
Pregunta:
What makes GaN an ideal candidate for switching power transistors?
Respuesta: GaN has high off-state breakdown strength and excellent on-state channel conductivity, making it ideal for switching power transistors. -
Pregunta:
What does the book highlight?
Respuesta: The book highlights the current and emerging applications of GaN in the semiconductor industry.
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HNL 4445
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características y beneficios
- GaN is a great alternative to existing microelectronic devices
- GaN has special properties for optoelectronic, high-power, and high-frequency devices
- GaN is an ideal candidate for switching power transistors
- The book explores recent progress in high-frequency GaN technology
- The book reviews the advantages of GaN-based material systems
- The book highlights the current and emerging applications of GaN
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